acceptor ion造句

• Although compensation can be used to increase or decrease the number of donors or acceptors, the electron and hole mobility is always decreased by compensation because mobility is affected by the sum of the donor and acceptor ions.
• Thus, field penetration is arrested when the exposed negative acceptor ion charge balances the positive charge placed on the insulator surface : the depletion layer adjusts its depth enough to make the net negative acceptor ion charge balance the positive charge on the gate.
• Thus, field penetration is arrested when the exposed negative acceptor ion charge balances the positive charge placed on the insulator surface : the depletion layer adjusts its depth enough to make the net negative acceptor ion charge balance the positive charge on the gate.
• This ease-of-flow threshold also applies to p-channel " depletion-mode " devices, in which a positive voltage from gate to body / source creates a depletion layer by forcing the positively charged holes away from the gate-insulator / semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions.
• If we consider a p-type semiconductor ( with N _ A the density of acceptors, " p " the density of holes; " p = N A " in neutral bulk ), a positive voltage, V _ { GB }, from gate to body ( see figure ) creates a depletion layer by forcing the positively charged holes away from the gate-insulator / semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions ( see doping ( semiconductor ) ).